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Spektralanalyse, spektrokemi, massespektrometri

Si Detectors and Characterization for HEP and Photon Science Experiment

How to Design Detectors by TCAD Simulation

Udgivet af Springer Nature Switzerland AG

Bogdetaljer

  • Hæftet
  • 183 sider
  • Engelsk
ISBN 9783030195335
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This book reviews the HL-LHC experiments and the fourth-generation photon science experiments, discussing the latest radiation hardening techniques, optimization of device & process parameters using TCAD simulation tools, and the experimental characterization required to develop rad-hard Si detectors for x-ray induced …

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Bogdetaljer
Forlag Springer Nature Switzerland AG
Kategori Spektralanalyse, spektrokemi, massespektrometri
ISBN-13 9783030195335
EAN 9783030195335
Format Hæftet
Sprog Engelsk
sider 183
Undertitel - How to Design Detectors by TCAD Simulation
Produktbeskrivelse
This book reviews the HL-LHC experiments and the fourth-generation photon science experiments, discussing the latest radiation hardening techniques, optimization of device & process parameters using TCAD simulation tools, and the experimental characterization required to develop rad-hard Si detectors for x-ray induced surface damage and bulk damage by hadronic irradiation.Consisting of eleven chapters, it introduces various types of strip and pixel detector designs for the current upgrade, radiation, and dynamic range requirement of the experiments, and presents an overview of radiation detectors, especially Si detectors. It also describes the design of pixel detectors, experiments and characterization of Si detectors.The book is intended for researchers and master''s level students with an understanding of radiation detector physics. It provides a concept that uses TCAD simulation to optimize the electrical performance of the devices used in the harsh radiation environment of the colliders and at XFEL.

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