Elektronisk udstyr og materialer
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Radiation Defect Engineering
Udgivet af World Scientific Publishing Co Pte Ltd
ISBN
9789812565211
Om denne bog
The increasing complexity of problems in semiconductor electronics and optoelectronics has exposed the insufficient potential of the technological doping processes currently used. One of the most promising techniques, which this book explores, is radiation doping: the intentional, directional modification of the proper…
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Bogdetaljer
Forfatter
Abrosimova Vera, Vitali V Kozlovski
Forlag
World Scientific Publishing Co Pte Ltd
Kategori
Elektronisk udstyr og materialer
ISBN-13
9789812565211
EAN
9789812565211
Format
Indbundet
Sprog
Engelsk
sider
264
Produktbeskrivelse
The increasing complexity of problems in semiconductor electronics and optoelectronics has exposed the insufficient potential of the technological doping processes currently used. One of the most promising techniques, which this book explores, is radiation doping: the intentional, directional modification of the properties of semiconductors under the action of various types of radiation. The authors consider the basic principles of proton interactions with single crystal semiconductors on the basis of both theory as well as practical results. All types of proton modifications of the materials known presently are analyzed in detail and exciting new fields of research in this direction are discussed.
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